Description
Sapphire Wafer and Sapphire substrate
Crystal Materials |
99.995% High Purity, 2-3 Grade Monocrystalline Al2O3
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Wafer Surface Orientation |
C-axis(0001) to M (1-100) or A (11-20) 0.2°±0.1°
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Diameter
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50.8mm ± 0.1mm |
76.2mm ± 0.25mm
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100.0 ± 0.4mm
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150.0 ± 0.5mm
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Thickness
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430±15µm 330±15µm |
650±25µm 430±25µm
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650±25µm 550±25µm
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1000±25µm
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Major Flat
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A-axis (1 1 - 2 0) ± 0.2°
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Major Flat Length
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16.0mm ± 1.0mm
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22.0mm ± 1.0mm
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32.5 ± 1.0mm
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57.0 ± 1.0mm
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Front Surface
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Epi polished, Ra< 0.30nm |
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Back Surface
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Fine ground (Ra ≈ 1.0 µm) |
Epi-Polished ( Ra< 0.30nm); or Fine ground
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Edge Condition |
Edge defects not to exceed SEMI M3-91 |
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TTV
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≤5um |
≤5um
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≤5um
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≤5um |
BOW
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≤5um
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≤5um
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≤7um
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≤15um
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Warp
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≤5um
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≤5um
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≤7um
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≤15um
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Surface Qulity
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Epi-ready |
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Packaging
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Packaged in a class 100 clean room environment, in cassettes of 25pcs or single package, under a nitrogen atmospher |
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Note
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R-plane (1-1 0 2), A-plane (1 1-2 0 ), and M-plane(1-1 0 0) are available; Customer's specification not listed above is also available upon request. |